离子注入方法形成电流限制孔径及其对器件光电特性的影响  

Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics

作　　者：刘成[1] 曹春芳[1] 劳燕锋[1] 曹萌[1] 吴惠桢[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室

出　　处：《Journal of Semiconductors》2008年第4期765-769,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:2003CB314903)~~

摘　　要：采用离子注入方法和后续的退火工艺制作了1.3μm面发射电致发光(EL)器件结构的电流限制孔径,通过对此结构的电学和光学特性进行测试分析,获得了离子注入和退火温度的优化参数,工艺参数为离子注入剂量5×1014cm-2和450℃退火1min.结果显示随着电流限制孔径的缩小,器件的电阻呈线性增大;电流限制孔径的形成显著增强1.3μm面发射器件结构的电致发光强度,孔径为15μm的样品是没有限制孔径样品的4倍(注入电流3mA),并就电流限制孔对EL器件结构电致发光的影响进行了物理解释.1.3μm surface-emitting electroluminescence （EL） device structures are fabricated. The electrically confined apertures are formed by ion implantation and thermal annealing technology. By studying electrical and optical characteristics of the device structure, we found that the optimized thermal annealing temperature is 450℃ when the ion implantation dose is 5 × 10^14cm^-2. The resistance of the device structure linearly increases with the decrease of aperture diameters. EL spectra intensities are remarkably enhanced after the electrically confined aperture is formed. For instance, the intensity of the sample with 15μm aperture is 4 times that without aperture. Finally, the effects of the electrically confined aperture on the EL spectra of the structure are physically explained.

关 键 词：电致发光器件结构 电流限制孔径 离子注入 

分 类 号：TN383[电子电信—物理电子学]