铝阳极氧化基板制备过程对埋置型Ta-N薄膜电阻的影响  

Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor

作　　者：朱大鹏[1] 罗乐[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《Journal of Semiconductors》2008年第4期774-779,共6页半导体学报（英文版）

摘　　要：在铝阳极氧化多层基板内用RF反应溅射制备了埋置型Ta-N薄膜电阻,研究了铝阳极氧化过程对Ta-N薄膜电阻和显微结构的影响.实验结果表明:Ta-N薄膜受上层多孔氧化铝膜影响在表层形成了由Ta2O5和Ta-O-N组成的氧化物凸起绝缘层,氧化物凸起层厚度与氧化电压有关.底层Ta-N薄膜电阻率和电阻温度系数基本保持不变,表层氧化凸起使电阻稳定性增加.A Ta-N thin film resistor was integrated in anodic alumina MCM-D substrate using RF reactive sputtering. The effects of the aluminum anodization process on the microstructure of the Ta-N resistor were studied. The results show that the oxide bulges composed of Ta2O5 and Ta-O-N were formed at the surface of Ta-N film due to the effect of the upper layer of porous anodic alumina. The oxide bulge thickness was related to the anodiztion voltage. The resistivity and TCR of the remaining Ta-N resistor remained unchanged. The resistor was more stable because of the protection of the oxide bulges.

关 键 词：阳极氧化 Ta-N薄膜电阻 电学性能 显微结构 

分 类 号：TB383.2[一般工业技术—材料科学与工程]