溶胶-凝胶法制备ZnO∶Al(ZAO)薄膜的红外发射率研究  

Study on infrared emissivity of ZnO∶Al(ZAO) thin films prepared by sol-gel process

作　　者：李琨[1] 罗发[1] 苏晓磊[1] 朱冬梅[1] 周万城[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《功能材料》2008年第4期590-592,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(90305016)

摘　　要：用溶胶-凝胶法在石英玻璃基底上制备了ZnO：Al（ZAO）薄膜，研究了热处理温度和Al掺杂含量对薄膜红外发射率的影响。通过XRD和SEM分析了薄膜的微观结构和表面形貌，用光谱辐射计测量了薄膜在8～14μm波段的光谱发射率。结果表明，制备的ZAO薄膜都具有ZnO六角形纤锌矿结构，没有生成杂质相。热处理温度是影响薄膜在8～14μm波段平均红外发射率（ε）的主要因素。随热处理温度的升高和Al掺杂含量的增加，薄膜的ε值有降低的趋势。ZnO ： Al（ZAO） thin films were deposited on quartz glass substrates by sol-gel process. The effects of annealing temperature and Al doping concentration on the infrared emissivity of the films were investigated. The microstructures and morphologies were analyzed through X-ray diffraction（XRD） and scanning electron microscopy（SEM） respectively,and the infrared emissivities in the band of 8-14μm were tested by spectrum radiometer. The results indicate that the crystal structure of the ZAO films is hexagonal wurtzite without other phase, which is the same as undoped ZnO film. Annealing temperature is found to be the critical parameter affecting the average infrared emissivity（ε） of ZAO film in the band of 8-14μm. The infrared emissivity of the films decreases as the annealing temperature and Al doping concentration increase.

关 键 词：ZAO薄膜 溶胶-凝胶法 红外发射率 

分 类 号：TB34[一般工业技术—材料科学与工程]