GaAs中由磁场引起的与Si施主有关的高亚稳态  

High-Index Metastable States of Si Donors in GaAs Under Magnetic Field

作　　者：陈张海[1] 陈忠辉[1] 刘普霖[1] 史国良[1] 胡灿明[1] 石晓红[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《Journal of Semiconductors》1997年第11期806-810,共5页半导体学报（英文版）

摘　　要：本文报道了GaAs中Si浅施主的博里叶变换红外（FTIR）磁光电导谱．观察到非零磁场下从类氢束缚基态到施主高亚稳态的跃迁．采用变分方法计算了跃迁能量以及这些高亚稳态的离化能的磁场关系，并与实验结果进行了比较．Fourier transform infrared (FTIR) Photoconductivity (PC) spectra of Si donors in GaAs under magnetic field are presented. The transitions from hydrogen-like ground state to the high-index metastable states under non-zero magnetic field have been observed. The magnetic field dependence of these transition energies is compared with the variational calculations, and the ionization energies of the high-index metastable states are determined.

关 键 词：砷化镓 硅 浅施主 高亚稳态 

分 类 号：TN304.23[电子电信—物理电子学]