Si^+注入热生长SiO_2的光致发光激发谱与光电子能谱  

Photoluminescence Excitation and Photoelectron Spectra of Si^+ Implanted Thermal SiO_2 Film

作　　者：宋海智[1] 鲍希茂[1] 

机构地区：[1]南京大学物理系,南京210093

出　　处：《Journal of Semiconductors》1997年第11期820-824,共5页半导体学报（英文版）

摘　　要：Si+注入的热生长SiO2，未退火及1000℃以下退火样品的光致发光谱为峰值在470nm的蓝光带，其光致发光激发谱主要为一个位于250nm的窄峰，且谱形不依赖于退火条件，光电子能谱显示样品注入层为比较均匀的SiOx；1000℃以上退火样品的发光谱为峰值在730nm的红光带，其激发谱有一个230nm的窄峰，同时在500nm附近还有一个随退火处理不断红移和增强的宽带，光电子能谱表明退火使样品注入层分离为SiO2和纳米硅晶粒两相．本文对两种发光带的复合过程、光吸收过程及其与微结构的关系进行了讨论．Si+ implanted thermally grown SiO2 film is investigated as a light-emitting material. For as-implanted samples and samples annealed below 1000℃, their blue photoluminescence (PL) bands around 470nm mainly show a sharp photoluminescence excitation (PLE) peak at 250nm with a shape independent of annealing, and their implantation layers are discovered consisting of uniform SiOx network through measurement of photoelectron spectra. For the samples annealed above 1000℃, their red PL bands around 730nm show a sharp PLE peak at 230nm t0gether with a broad PLE band redshifting and increasing with annealing, and their implantation layers change into SiO2 and nanocrystal Si particles according to the photoelectron spectra. Discussion is made on the recombination, photoabsorption of the two PL bands and their relations with microstructures.

关 键 词：二氧化硅 硅离子 注入 PLE XPS 热生长 

分 类 号：TN304.21[电子电信—物理电子学]