电迁徙参数—电流密度因子电流斜坡测试法  

Electromigration Parameter-A Dynamic Current Ramp Measurement Method of Current Density Exponent

作　　者：李志国[1] 孙英华[1] 邓燕 张炜[1] 程尧海[1] 郭伟玲[1] 张万荣 

机构地区：[1]北京工业大学电子工程系,北京100022

出　　处：《Journal of Semiconductors》1997年第11期825-831,共7页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文对电迁徙参数电流密度因子n及n值的精确测量技术进行了深入研究．首次提出了动态电流斜坡电流密度因子测试法（DCR）．该方法与传统的MTF法不同，能精确控制金属条温，消除了高电流密度条件下焦耳热的影响，提高了n值的测量精度与速度．研究了四种不同样品直流和脉冲条件下的n值．实验结果表明，n值与材料、频率、占空比有关，与温度、一定范围内的电流密度无关．The current density exponent (n) and its accurate measurement technology in Black equation are studied. A dynamic current ramp method (DCR) is presented for the first time. Compared with the MTF method, it can improve the accuracy and test speed of n and eliminate effect of Joule heat in high current density. The n values of four samples have been measured under DC and pulse stress. The results show that the values of n depend on materials, frequency and duty ratio, but are independent of temperature and current density in some degree.

关 键 词：电流密度 电迁徒参数 DCR 半导体材料 测试 

分 类 号：TN304.07[电子电信—物理电子学]