基于SiGe HBT的超宽带低噪声放大器的设计  

Design of an Ultra-Wideband Low Noise Amplifier Based on SiGe HBT's

作　　者：张蔚[1] 张万荣 谢红云[1] 金冬月[1] 何莉剑[1] 王扬[1] 沙永萍[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022

出　　处：《微电子学》2008年第2期271-274,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60776051;60376033);北京市教委科技发展计划资助项目(KM200710005015);北京工业大学研究生科技基金重点资助项目(ykj-2006-291);北京市属市管高校中青年骨干教师培养计划资助项目(102(KB)-00856);北京市优秀跨世纪人才基金资助项目(67002013200301)

摘　　要：结合超宽带（UWB）无线通信标准，给出了超宽带低噪声放大器（LNA）的设计思路。依据这个思想，并以高性能硅锗异质结双极型晶体管为核心，设计了一款超宽带低噪声放大器。采用安捷伦的ADS，对设计的放大器进行了仿真验证。结果表明，该放大器在3．1～6GHz带宽内，S21高于11dB，且变化不超过3dB；S11和S22都在-15dB以下；S12低于-20dB；放大器的噪声系数在1．3-1．7dB之间，群延时在整个频带内变化在15ps左右，且在整个频带内无条件稳定。放大器良好的性能证明了提出的设计思想的正确性。According to the standard of UWB wireless communication, a design methodology for ultra-wideband low noise amplifier （LNA） was proposed. A UWB LNA was designed based on a high performance SiGe heterojunction bipolar transistor. Results from ADS simulation showed that the LNA had a noise figure between 1.3 dB to 1, 7 dB, and a group delay of about 15 ps; and the S21 was above 11 dB with variation no more than 3 dB, the Sn and S22 were both below -15 dB, and even the S12 was below -20 dB in the frequency band of 3. 1 GHz to 6 GHz. Furthermore, the LNA was unconditionally stable in the whole band.

关 键 词：超宽带 低噪声放大器 SIGE HBT 

分 类 号：TN322.8[电子电信—物理电子学] TN722.3