薄膜晶体管阵列四次光刻工艺中光刻胶灰化工艺的研究  

Ashing Process of Photoresist in Four-Mask Fabrication of Thin Film Transistors

作　　者：刘翔[1] 王章涛[2] 崔祥彦[2] 邓振波[1] 邱海军[2] 

机构地区：[1]北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室,北京100044 [2]北京京东方光电科技有限公司,北京100176

出　　处：《液晶与显示》2008年第2期183-187,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金(No.90201004)

摘　　要：光刻胶灰化是薄膜晶体管四次光刻工艺的核心工艺之一。初步研究了用纯O2对光刻胶进行灰化的工艺,影响光刻胶灰化的主要因素有功率、气压和灰化气体的流量,经过一组正交实验,得到了功率、气压、灰化气体的流量对光刻胶的灰化速率和均匀度的影响趋势。结果表明,功率是影响灰化速率的主要因素。通过不断地优化光刻胶的灰化条件,最终得到了理想的灰化条件,即功率为10500W,气压为26.7Pa,O2的流量为2000mL/min,灰化时间为91s。Ashing process of photoresist （PR） is one of key steps in the Thin Film-Transistor four-mask fabrication process. PR ashing process with pure O2 were investigated in this article. There are three main factors that influence on the photoresist ashing process, including power, pressure and gas flow. With the orthogonal matrix test, the effects of power, pressure and gas flow on the ashing rate and uniformity has been concluded. The results showed that power has the most remarkable effect on the ashing rate. By continual optimization of as-hing process, the ashing conditions with power of 10 500 W, pressure of 26.7 Pa and O2, flow of 2 000 mL/min is approved to be acceptable.

关 键 词：薄膜晶体管 四次光刻 光刻胶 灰化 

分 类 号：TN321.5[电子电信—物理电子学]