无机相变信息存储材料研究新进展  

New Progresses in Inorganic Phase-Change Materials for Information Storage

作　　者：孙华军[1] 侯立松[1] 魏劲松[1] 吴谊群[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《激光与光电子学进展》2008年第4期15-24,共10页Laser & Optoelectronics Progress

基　　金：国家重点基础研究发展计划(2007CB935402);国家自然科学基金(50502036和60644002)资助项目

摘　　要：硫族化合物合金GeSbTe(GST)和AgInSbTe等相变材料(PCM)已经在光存储技术中得到广泛的应用,用相变电存储器件作为闪存的替代产品已成为国内外研究的热点。与此同时,相变材料在一些领域也取得了新的应用。总结了近年来国内外在相变材料的存储机制、光/电存储性能的改进以及新应用等方面的最新研究成果,并展望了相变材料的研究前景。Phase-change chalcogenide alloys GeSbTe and AglnSbTe have been successfully used in rewritable optical discs, and researches in the phase change memory （PCM） device as substitute for flash memory is becoming a hotspot in the field of information storage. Also, new applications of phase-change materials have been developed in the related areas. Latest experimental and theoretical results on the mechanism and improvement in the optical / electrical storage properties, as well as some new applications of phase-change materials are reviewed, and their development trend is prospected.

关 键 词：相变材料 纳米结构 光龟存储 改性 

分 类 号：TP333.4[自动化与计算机技术—计算机系统结构]