Si(001)上MBE异质生长Ge中表面活化剂Sb的作用的研究  

Influence of Sb as Surfactant on Ge Epitaxial Growth on Si(001)

作　　者：徐阿妹[1] 朱海军[1] 毛明春[1] 蒋最敏[1] 卢学坤[1] 胡际璜[1] 张翔九[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《Journal of Semiconductors》1997年第10期725-730,共6页半导体学报（英文版）

摘　　要：本文利用RHEED、X射线双晶衍射及TEM等技术，研究了在Si（001）衬底上，用晶化了的无定形Ge层做缓冲层MBE生长Ge时，引入表面活化剂Sb所产生的影响．研究表明，Sb的引入将会使Si（001）衬底上无定形Ge膜的晶化温度显著提高，并在一定的生长条件下，破坏Ge外延层的结晶性．The surfactant effect of Sb on the heteroepitaxial growth of Ge on Si(001) is investigated by RHEED(Reflection High Energy Electron Diffraction), double crystal X-ray diffraction and TEM (Transmission Electron Microscopy) technology. In the growth of Ge epitaxy layer, amorphous Ge layer crystallized by annealing is used as the buffer layer.As compared with the sample without Sb surfactant, experiment results show that by depositing one monolayer of Sb on Si (001) substrate before Ge growth, the annealing temperature for crystallizing the amorphous Ge buffer layer will become much higher, and that the crystallinity of Ge epitaxial layer will become worse under certain growth conditions.

关 键 词：半导体 砷化镓 硅 MBE异质生长 表面活化剂 

分 类 号：TN304.12[电子电信—物理电子学] TN304.054