大功率体光栅外腔半导体激光器的输出特性  

Characteristics of High Power Volume-Bragg-Grating External Cavity Semiconductor Lasers

作　　者：薄报学[1] 高欣[1] 乔忠良[1] 王玉霞[1] 卢鹏[1] 李辉[1] 么颜平[1] 刘春玲[1] 黄波[1] 曲轶[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《中国激光》2008年第4期501-504,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金(60474026;60477010)资助项目

摘　　要：宽条形大功率半导体激光器（LD）存在光谱温漂系数大、光谱宽度宽的缺点，为了改善宽条形大功率半导体激光器的光谱特性，采用一种体光栅（VBG）离轴外腔方法实现了宽条形大功率半导体激光器光谱特性的明显改善和高效率工作。宽条形半导体激光器的外腔结构主要包括激光器输出光束的快、慢轴准直光学透镜和离轴放置的体光栅。宽条形半导体激光器的激射条宽为100μm，当激光器工作电流为4．0A时，外腔激光器的输出功率高达3．4W，斜率效率为1．0W／A，光谱宽度由自由出射条件下的2～3nm减少为0．2nm，峰值波长的温漂系数小于0．015nm／℃。High wavelength shift coefficient varying with temperature and broad spectrum width are disadvantages of the output properties of high power broad-area semiconductor lasers. For improving the output spectral properties of broad-area semiconductor lasers, a volume-Bragg-grating （VBG） off-axis external cavity method was adopted with satisfied effect on spectrum and slope efficiency. The external cavity laser composes of a broad-area stripe semiconductor laser with fast-axis and slow axis beam collimation, and a VBG positioned off-axis. The broad-area stripe semiconductor laser has an emission width of 100μm. High power output is achieved with 3.4 W at working current with 4.0 A. The slope efficiency is 1.0 W/A, and a narrower output spectrum of 0.2 nm width is realized compared with free output spectrum width of 2-3 nm. The wavelength shift coefficient varying with temperature is less than 0. 015 nm/℃.

关 键 词：激光器 半导体激光器 体光栅 外腔 光谱 

分 类 号：TN248.4[电子电信—物理电子学]