氮离子注入甜菊的细胞学效应  

CYTOLOGICAL EFFECT OF NITROGEN ION IMPLANTATION INTO Stevia

作　　者：慎玫[1] 王彩莲[1] 陈秋方[1] 陆挺[2] 舒世珍[3] 

机构地区：[1]浙江省农业科学院原子能利用研究所 [2]北京师范大学低能核物理研究所 [3]中国农业科学院作物品种资源研究所

出　　处：《核农学报》1997年第3期141-144,共4页Journal of Nuclear Agricultural Sciences

基　　金：国家和北京市自然科学基金

摘　　要：用不同能量氮离子注入甜菊干种子，在Ｍ１根尖细胞内可观察到各种可见染色体结构变异及有丝分裂行为异常。随着注入离子的剂量和能量的提高，染色体畸变细胞率呈增加趋势。统计分析显示，离子注入的剂量效应大于能量效应。染色体畸变细胞率与氮离子注入剂量的直线回归关系不显著，但与γ辐照剂量的直线回归关系达极显著，γ射线对甜菊Ｍ１的辐射损伤大于氮离子束。Dry seeds of Stevia were implanted by 35～150 keV nitrogen ion with various doses. The cytological effect on M 1 was studied. The results showed that nitrogen ion beam was able to induce variation on chromosome structure in root tip cells. The rate of cells with chromosome aberration was increased with the increase of ion beam energy and dose. However, there was no significant linear regression relationship between ion dose and aberration rate. The cytological effect of nitrogen ion implantation was lower than that of γ rays. \ \

关 键 词：氮离子注入 甜菊 染色体畸变 

分 类 号：S566.903.2[农业科学—作物学]