无压烧结碳化硅研究进展  

The Development of Pressureless-sintered Silicon Carbide

作　　者：王静[1] 张玉军[1] 龚红宇[1] 

机构地区：[1]山东大学材料科学与工程学院,济南250061

出　　处：《陶瓷》2008年第4期17-19,50,共4页Ceramics

摘　　要：碳化硅具有良好的高温性能以及化学稳定性,已广泛应用于许多领域。综述了无压烧结碳化硅烧结助剂体系的研究进展,综述了碳化硅原料种类、烧结助剂种类及用量、成形工艺、烧结工艺对无压烧结碳化硅性能的影响。Silicon carbide, with excellent high temperature stability and chemical stability, has been used in various fields. The development of sintering additives of pressureless-sintered silicon carbide are summarized in this article, including the effects of different kinds of silicon carbide raw materials, the kinds and content of sintering additives, molding process and sintering process on the properties of pressureless-sintered silicon carbide.

关 键 词：碳化硅 无压烧结 烧结助剂 烧结温度 

分 类 号：TQ174.758[化学工程—陶瓷工业] S816[化学工程—硅酸盐工业]