PECVD SiO_2薄膜内应力研究  

Study of Internal Stress in PECVD SiO_2 Thin Films

作　　者：孙俊峰[1] 石霞[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《半导体技术》2008年第5期397-400,共4页Semiconductor Technology

摘　　要：研究了等离子体增强化学气相淀积(PECVD)法生长SiO2薄膜的内应力。借助XP-2型台阶仪和椭偏仪测量计算了SiO2薄膜的内应力,通过改变薄膜淀积时的工艺条件,如淀积温度、气体流量、反应功率、腔体压力等,分析了这些参数对SiO2薄膜内应力的影响。同时讨论了内应力产生的原因以及随工艺条件变化的机理,对工艺条件的优化有一定参考价值。The internal stress in SiO2 thin films prepared by PECVD was studied and measured by XP-2 stylus profilometer and spectral ellipsometer. By changing the deposition conditions, such as temperature of deposition, gas flux-rate, power of reaction, gas pressure in chamber and so on, the influence of critical process parameters on SiO2 thin films stress was investigated. The cause of stress and the mechanism of different process conditions were discussed, which provided with orientation for optimizing the process.

关 键 词：内应力 二氧化硅薄膜 等离子增强化学气相淀积 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]