RF MEMS器件时变结构电磁特性数值计算方法  

A Numerical Method for Calculating Electromagnetic Character of RF MEMS Devices With Time-Varying Structures

作　　者：吴银锋[1] 万江文[2] 冯仁剑[2] 

机构地区：[1]北京邮电大学自动化学院,北京100876 [2]北京航空航天大学仪器科学与光电工程学院,北京100083

出　　处：《电工技术学报》2008年第4期1-5,共5页Transactions of China Electrotechnical Society

基　　金：国家高技术研究发展计划(863计划)专项经费(2006AA01Z222);北京市自然科学基金(3083024)资助项目

摘　　要：准确掌握射频微机电(RFMEMS)器件的电磁特性是WSN节点射频收发前端设计可靠与否的关键,为解决RFMEMS器件时变结构的电磁特性数值计算问题,建立了RFMEMS器件垂直运动结构的机电耦合模型,实现了模型的时域离散,在时域有限差分的基础上,提出电(磁)介质参数插值的新思路,详细阐述了线性电(磁)介质参数插值法的基本思想,并推导了一维线性插值的计算公式。仿真实验结果表明,该计算方法具有易实现、速度快、效率高的特点。With the development of radio frequency micro-electro-mechnical system （RF MEMS） technology, more and more RF MEMS devices are used for RF front-end in WSN nodes. It is the key factor that to learn the electromagnetic character of RF MEMS devices in the design of WSN nodes. To analysis the electromagnetic character of RF MEMS devices, with time-varying structures in numerical simulation. A coupling of electromagnetic and mechanical model is build. A new method is proposed, that is ＂dielectric parameter interpolations＂, based on FDTD method. Main ideas of linear dielectric interpolation method are discussed, and calculating formula is derived for one dimensional. The preliminary simulation results show that the method is easy to understand, implement and efficient.

关 键 词：RF MEMS器件 电磁特性 时变结构 线性插值 

分 类 号：TM154.3[电气工程—电工理论与新技术]