PZT铁电薄膜的制备与性能  

The Fabrication and Performance of PZT Ferroelectric Films

作　　者：张兴国[1] 刘军[1] 骆英[1] 

机构地区：[1]江苏大学材料科学与工程学院,江苏镇江212013

出　　处：《稀有金属材料与工程》2008年第A01期717-720,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金资助(50375069);江苏省高技术项目资助(BG2006026)

摘　　要：用sol-gel法在Al_2O_3基片上制备PZT铁电薄膜。研究发现,制备PZT溶胶时加入乙酰丙酮可以提高溶胶的稳定性,并抑制热处理时薄膜上裂纹的产生。薄膜在700℃热处理可以得到单一的钙钛矿结构;低温慢升高温快升的升温制度可以减少薄膜的开裂。Pt底电极的加入有利于钙钛矿相的形成。PZT薄膜电滞回线形状和Pr、Ec等随着热处理制度和薄膜厚度的变化而变化。PZT ferroelectric films were prepared on Al2O3 substrate. It was found that acetylacetone could improve the PZT sol stability and prevent cracking of the film. The single phase of the perovskite structure was formed when the PZT film was annealed at 700 ℃. The selection of the suitable annealed conditions could reduce the cracks in the films. The bottom Pt electrode addition also could assist the formation of the perovskite structure. The shapes of the ferroelectric loop and Pr, Ec were correlated to the annealed conditions and the thickness of the PZT films.

关 键 词：薄膜 铁电性能 热处理 

分 类 号：TB383.2[一般工业技术—材料科学与工程]