有机反转电致发光器件的负阻特性  

Negative resistance characteristics of inverted organic light-emitting devices

作　　者：李建丰[1,2] 孙硕[1] 张春林[1,2] 李海蓉[1] 欧谷平[1] 张福甲[1] 

机构地区：[1]兰州大学物理科学与技术学院,甘肃兰州730000 [2]兰州交通大学数理与软件工程学院,甘肃兰州730070

出　　处：《兰州大学学报（自然科学版）》2008年第2期124-127,共4页Journal of Lanzhou University(Natural Sciences)

基　　金：国家自然科学基金(60676033)资助

摘　　要：对结构为Si/Al/Alq_3/PVK:TPD/PTCDA/ITO的有机反转电致发光器件I-V特性的测量发现,其电压出现了峰值的负阻现象.分析表明:高电压注入时,器件内形成了高浓度的等离子体;载流子寿命和迁移率随注入电压变化;特别是体内出现了严重的电导调制效应使得器件由高阻区变为低阻区,这些是形成负阻特性的主要原因.通过引入双极迁移率和双极扩散系数将空穴和电子的电流连续性方程联合起来,解释了具有负阻区段的I-V特性曲线.A singular negative resistance phenomenon was found in the measurement of Ⅰ- Ⅴ characteristics of inverted organic light emitting devices whose structure was Si/Al/Alq3/PVK ： TPD/PTCDA/ITO. Analysis indicated that, when high voltage was injected, highly concentrated plasma formed in the device, and the life and mobility of carriers changed with the transformation of the voltage. At the same time, severe conductivity modulation effect made the device change from high resistance section to low resistance section. The main reasons for negative resistance effect were as mentioned above. By introducing bipolar mobility and bipolar diffusion coefficients, we combined hole current continuity equation with electronic current continuity equation, which explained Ⅰ- Ⅴ characteristic curve which had a section of negative resistance.

关 键 词：有机电致发光器件 反转型器件 负阻现象 电流连续性方程 

分 类 号：TN383.1[电子电信—物理电子学]