紫外光辐射在硅片表面活化键合中的应用  

Application of UV radiation in silicon wafer surface activation bonding

作　　者：林晓辉[1] 史铁林[1] 廖广兰[1] 汤自荣[1] 彭平[2] 王海珊[1] 

机构地区：[1]华中科技大学机械科学与工程学院,武汉430074 [2]武汉光电国家实验室,武汉430074

出　　处：《功能材料与器件学报》2008年第2期353-357,共5页Journal of Functional Materials and Devices

基　　金：国家重大基础研究项目(No.2003CB716207);国家自然科学基金资助项目(No.50405033)

摘　　要：在硅圆片表面亲水活化键合工艺中引入了紫外光照射并对其工艺参数和效果进行了评估。基于基本键合流程,通过对比实验,研究紫外光照与否,以及照射时间长短对硅片键合质量的影响。同时利用红外检测仪,拉伸强度测试仪以及原子力显微镜分别对键合面积,键合强度和表面粗糙度等因素进行了测定。此外,利用了承载率这一指标,对比了达到相同承载率时所需要克服的形变,以此对硅片的键合能力进行了评估。各项结果表明,硅片经过C波段和V波段的混合紫外光照射5m in,相比于不经过紫外辐射的硅片,表面粗糙度得到了明显的改善,并获得最高的键合能力和拉伸强度。长时间的紫外辐射会破坏表面,进而影响其键合能力,使得拉伸强度降低。Ultraviolet （UV） exposure was employed in silicon wafer surface activation bonding and its process and effect were evaluated. Based on basic bonding process, comparative trials were performed to find out the impacts of UV exposure and different exposure time. Infrared detection, tensile strength test and AFM were used to exam the bonding area, bonding strength and surface roughness. Besides, the parameter＂ Bearing Ratio＂ was employed to evaluated the bond ability by comparing deformation needed to reach a certain value of bearing ratio. The results showed that the surface condition, bond ability and tensile strength were greatly improved with 5 minutes＇ UV exposure. Long time exposure would damage the surface and affect the bond ability and quality.

关 键 词：表面活化 紫外辐射 表面粗糙度 承载率 

分 类 号：TN43[电子电信—微电子学与固体电子学]