硅玻璃阳极键合绝压压阻式压力传感器中的残余应力  

Residual stress in absolute pressure sensor using Si-Glass anodic bonding

作　　者：许东华[1] 张兆华[1] 林惠旺[1] 刘理天[1] 任天令[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《功能材料与器件学报》2008年第2期452-456,共5页Journal of Functional Materials and Devices

基　　金：国家863项目(No.2006AA04Z372);北京市科委项目(No.GYYKW0507009)

摘　　要：硅玻璃阳极键合技术因键合强度高,工艺简单而成为低成本绝压压力传感器的主要封装技术。但由于常规的硅玻璃阳极键合需要在相对较高的温度下进行且材料之间不可避免的热膨胀系数失配将产生较大的残余应力。实验采用有限元方法对硅玻璃阳极键合进行了系统的力学分析以减小残余应力对器件性能的影响。实验中采用硅玻璃阳极键合技术制备了不同压敏膜厚度和尺寸的传感器并测试其曲率与零点以对残余应力进行分析验证。Because of large bonding strength and simple process, si -glass anodic bonding is popular in seal of low price absolute pressure sensor. But a bit higher temperature and different coefficients of thermal expansion results in large residual stress in common siglass anodic bonding. In order to reduce the influence of residual stress to device characteristics, this paper analyses anodic bonding in mechanics sys-tematically using finite element method. In experiment, several absolute pressure sensors with diaphragm different in thickness and dimension were made using si - glass anodic bonding technology, and then wafer curvature and sensor offset were tested to research the residual stress on the diaphragm.

关 键 词：硅-玻璃 阳极键合 压力传感器 残余应力 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]