Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor  

作　　者：徐成 刘波 陈一峰 梁爽 宋志棠 封松林 万旭东 杨左娅 谢志峰 陈邦明 

机构地区：[1]Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [2]Graduate School of the Chinese Academy of Sciences, Beijing: 100049 [3]Graduate School of the Chinese Academy of Sciences, Beijing 100049 [4]Semiconductor Manufacturing Interntionai Corporation, Shanghai 201203

出　　处：《Chinese Physics Letters》2008年第5期1848-1849,共2页中国物理快报（英文版）

摘　　要：A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor （MOSFET） is fabricated using standard 0.18 #m complementary metM-oxide semiconductor process technology. It shows steady switching characteristics in the dc current-voltage measurement. The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50ns is also obtained. These results show the feasibility of integrating phase change memory cell with MOSFET.A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor （MOSFET） is fabricated using standard 0.18 #m complementary metM-oxide semiconductor process technology. It shows steady switching characteristics in the dc current-voltage measurement. The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50ns is also obtained. These results show the feasibility of integrating phase change memory cell with MOSFET.

关 键 词：GE2SB2TE5 FILM 

分 类 号：O47[理学—半导体物理]