InAs/GaSb超晶格红外探测器台面湿法腐蚀研究  

Study of Mesa Etching for a InAs/GaSb Superlattice Infrared Detector

作　　者：陈慧娟[1] 郭杰[1] 丁嘉欣[1] 鲁正雄[1] 彭振宇[1] 孙维国[1] 

机构地区：[1]中国空空导弹研究院,河南洛阳471009

出　　处：《微纳电子技术》2008年第5期298-301,共4页Micronanoelectronic Technology

摘　　要：研究了不同腐蚀体系对InAs/GaSb超晶格材料台面的刻蚀,并从中选择了由氢氟酸、酒石酸和双氧水构成的酒石酸腐蚀体系。该体系较适合InAs/GaSb超晶格材料的刻蚀,刻蚀速率稳定,下切效应小。进一步研究发现当HF达到一定浓度后不再影响刻蚀速度;在较低的酒石酸和双氧水浓度下,刻蚀速度是由氧化过程控制,且反应速度和双氧水的浓度成正比。腐蚀液配比为酒石酸(3.5g)∶H2O2(4mL)∶HF(1mL)∶H2O(400mL),刻蚀速度约为0.5μm/min。A new etchant consisting of hydrofluoric acid, peroxide and tartaric acid was seclected from different wet-chemical etchants for etching InAs/GaSb superlattice materials. The stable etching rate, good etching morphology and low longitudinal etching could be obtained using the etchant with suitable proportion. The etching rate was controlled by oxidation under the low concentration of peroxide and tartaric acid, and irrespective of the HF concentration. It is found that the etching rate is proportional to the concentration of peroxide and about 0.5 μm/min at tartaric acid： H2O2 ： HF： H2O =3.5 g： 4 mL： 1 mL： 400 mL.

关 键 词：砷化铟/锑化镓 超晶格 化学湿法腐蚀 台面刻蚀 溶液配比 

分 类 号：TN362[电子电信—物理电子学] TN305.2