YAGG：Tb，Gd荧光薄膜及其发光性能的研究  

Preparation and luminescence properties of YAGG:Tb,Gd thin films

作　　者：张晓松[1,2] 董孝义[1] 李岚[2] 张艳芳[2] 李江勇[2] 董冬青[2] 

机构地区：[1]光电信息技术教育部重点实验室,现代光学研究所南开大学,天津300071 [2]天津市光电显示材料与器件重点实验室,天津理工大学,天津300191

出　　处：《光电子．激光》2008年第5期636-639,643,共5页Journal of Optoelectronics·Laser

基　　金：国家“973”计划资助项目(2003CB314906);天津市自然科学基金资助项目(07JCYBJC06400)

摘　　要：用电子束蒸发方法在ITO基片上生长YAGG:Tb,Gd荧光薄膜,并经不同条件下退火处理。分别用X射线衍射、X射线光电子能谱、扫描电子显微镜、光致发光谱,表征YAGG:Tb,Gd荧光薄膜的结构、成分、形貌、发光性能。实验表明随着温度的升高,薄膜的结晶程度提高,弥补了薄膜晶体表面的表面缺陷,提高了薄膜的光致发光性能,同时发现光致发光谱中的谱线加宽。YAGG： Tb, Gd thin films have been grown on ITO substrates by electron beam evaporation method with sintered YAGG：Tb,Gd target,and are annealed in 400 ℃ and 600 ℃ respectively. The construction,ingredient,surface morphology and luminescence properties of the YAGG： Tb,Gd thin films are investigated by X-ray diffraction,X-ray photoelectron spectroscope,scanning electron microscope and photolumineseence spectra. It is found that crystallization is improved, and the disfigurement on crystal surface is repaired. The photo-luminescent properties of YAGG：Tb,Gd thin films is enhanced with increasing the annealing temperature. At the same tlme,it can be concluded that the width of the main peak in photoluminescence spectra increases after the annealing process. The luminescent properties of YAGG：Tb,Gd thin films are enhanced in 400 ℃ and 600 ℃ annealing processes. So it can be concluded that post-deposition annealing is one of effective methods to increase luminescence properties of YAGG： Tb, Gd phosphor thin films.

关 键 词：YAGG:Tb GD 荧光薄膜 电子束蒸发 退火处理 

分 类 号：O484.41[理学—固体物理]