一种改进型高性能CMOS锁相环电荷泵的设计  

Design of a Modified High Performance CMOS Charge Pump for PLL

作　　者：汪祥[1] 戎蒙恬[1] 

机构地区：[1]上海交通大学电子工程系,上海200240

出　　处：《上海交通大学学报》2008年第4期629-633,共5页Journal of Shanghai Jiaotong University

基　　金：国家自然科学基金委创新研究群体基金(60521002);上海-应用材料研究与发展基金(0501;06SA09)资助项目

摘　　要：设计了一种高性能锁相环电荷泵电路.该电路采用UMC 0.18μm Mix-Mode CMOS工艺实现.仿真结果表明,通过利用电荷共享加速电流镜的开启,该电荷泵开启时间仅为0.3 ns,不会产生鉴相死区,能较好地抑制时钟馈通、电荷注入等非理想特性的影响,并且适合于低电压工作.通过与传统型及参考型两种电荷泵电路的仿真对比,验证了所设计电荷泵的优越性.A high performance charge pump circuit for phase-locked loop （PLL） was designed in UMC 0.18μm Mix-Mode CMOS process. The simulation results indicate that , by taking advantage of charge-sharing, this charge pump circuit can turn on in 0.3 ns, as a result of which the deadzone is eliminated. Besides, nonideal characteristic caused by clock feedthrough and channel charge injection effect is also reduced. This circuit is also suitable for low voltage application. By comparing the simulation result with other two charge pumps, the advantage of this design is validated.

关 键 词：电荷泵 锁相环 互补型金属氧化物半导体 

分 类 号：TN43[电子电信—微电子学与固体电子学]