脉冲退火法制备多晶硅薄膜的研究  

Investigation on Poly-Si Thin Film Fabricated by PRTP

作　　者：张松青[1] 张丽伟[2] 赵新蕖[1] 卢景霄[3] 

机构地区：[1]河南机电高等专科学校,新乡453002 [2]新乡学院,新乡453000 [3]郑州大学材料物理教育部重点实验室,郑州450052

出　　处：《人工晶体学报》2008年第2期285-288,共4页Journal of Synthetic Crystals

基　　金：河南省自然科学基础研究项目(No.2008C140001)

摘　　要：用射频等离子体化学气相沉积(RF-PECVD)法在普通玻璃衬底上低温制备了μc-Si:H薄膜。采用快速光热退火炉(RTP),分别用低温(<650℃)和中温(<750℃)脉冲法(PRTP)对薄膜进行了退火处理。用拉曼光谱和扫描电子显微镜(SEM)研究了不同条件下退火薄膜散射谱的特征和表面形貌。结果显示,脉冲退火法晶化的薄膜,晶化率达到了53%,部分颗粒团簇的尺寸已达到200nm左右。用声子限域理论和表面尺寸效应对薄膜频谱的"红移"和"蓝移"现象进行了分析。μc-Si：H films were deposited on common glass substrate by radio frequency plasma enhanced chemical vapor deposition （ RF-PECVD）, then low temperature （ 〈 650℃） conventional rapid thermal processing and middle temperature （ 〈 750 ℃ ） pulsed rapid thermal processing had been used for the solid-phase crystallization （SPC） of μc-Si ： H films. The scattering spectrogram and surface morphology of films were investigated through Raman and SEM. The result showed that the film has better crystallinity, the crystallinity of the film is 53 % and the size of some cluster grains are about 200 nm. The red-shift and blue-shift phenomenon were analyzed using the surface effects and the phonon confinement theory.

关 键 词：SI薄膜 脉冲快速光热退火 拉曼光谱 扫描电子显微镜 

分 类 号：TN304[电子电信—物理电子学]