PECVD生长掺磷纳晶硅薄膜的电导特性研究  

Investigation on Conductive Properties of Phosphorus-doped nc-Si(P):H Thin Films Grown by PECVD

作　　者：刘玉芬[1] 郜小勇[1] 刘绪伟[1] 赵剑涛[1] 卢景霄[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,郑州450052

出　　处：《人工晶体学报》2008年第2期332-336,共5页Journal of Synthetic Crystals

基　　金：国家重点基础研究发展计划(973计划)(No.2006CB202601)

摘　　要：采用等离子体增强化学气相沉积(PECVD)技术,在玻璃衬底上低温沉积了优质本征纳晶硅(nc-Si:H)薄膜和掺磷纳晶硅(nc-Si(P):H)薄膜。通过拉曼散射谱和XRD衍射谱分别研究了PH3浓度对nc-Si(P):H薄膜的晶化率(Xc)和晶格微观畸变(Ls)的影响,结果显示随着PH3浓度的增加,Xc和Ls均呈现了先增加后减小的相似趋势,暗示二者之间存在紧密的关联;利用四探针法测量了nc-Si(P):H薄膜的电导率(σ),结果表明,nc-Si(P):H薄膜的σ比nc-Si:H薄膜提高了约5个数量级,且随着PH3浓度的增大而单调增大。该变化可以从Xc、Ls的角度得到合理解释。Intrinsic and phosphorus-doped nc-Si： H films were deposited on glass substrate at low temperature by PECVD technique. And the dependence of PH3 concentration on its crystalline volume fraction（ Xc ）and lattice strain （Ls） were investigated by Raman and XRD spectroscopy respectively. It is demonstrated that Xo and L. have a similar change trend with PH3 concentration, which implies a close relationship between them. The measured electrical conductivity （σ） of nc-Si （P） ： H films shows an increase by five order than that of nc-Si ： H films and a monotonous increase with PH3 concentration. This change can be reasonably explained from Xc and Ls.

关 键 词：纳晶硅薄膜 晶化率 电导率 晶格畸变 

分 类 号：O484[理学—固体物理]