铟掺杂的氧化锌纳米带的制备和发光特性  

Synthesis and Optical Properties of Indium-doped Zinc Oxide Nanobelts

作　　者：卢会清[1] 高红[1] 张锷[1] 张喜田[1] 

机构地区：[1]哈尔滨师范大学物理系,哈尔滨150080

出　　处：《人工晶体学报》2008年第2期376-379,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.10374024;60776010);黑龙江省人事厅博士后启动基金;黑龙江省教育厅海外学人项目(1055HZO22);哈尔滨师范大学博士启动基金

摘　　要：以混合的ZnO粉和金属In作为前驱物,通过化学气相沉积方法在Si衬底上合成了In掺杂的ZnO纳米带。利用场发射扫描电子显微镜、透射电子显微镜以及附带的能谱仪对它们的结构和成分进行了表征。结果表明,ZnO纳米带沿<101-0>方向生长;In的掺杂浓度是21%原子分数。讨论了ZnO纳米带的形成机制和光致发光特性。In-doped ZnO nanobehs were synthesized on silicon substrates through chemical vapor deposition method using a mixture of ZnO powders and In as precursor. The nanobelts were characterized by field-emission scanning electron microscopy, high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy. The results show that the nanobelts grow along the 〈 1010 〉 direction and content of In in the nanobelts is 21 at%. The formation mechanism and photoluminescence of the nanobelts were discussed.

关 键 词：ZNO纳米带 掺杂 化学气相沉积 

分 类 号：O484[理学—固体物理]