Zn_(1-x)Mg_xSe外延半导体合金薄膜的红外反射光谱研究  

INFRARED REFLECTION SPECTRA OF EPITAXIAL Zn 1- x Mg x Se FILMS GROWN ON GaAs SUBSTRATES

作　　者：王东红[1,2] 黄大鸣[1,2] 魏彦锋[1,2] 靳彩霞[1,2] 王杰[1,2] 陈张海[1,2] 陆卫[1,2] 

机构地区：[1]复旦大学物理系和应用表面物理国家重点实验室 [2]中国科学院上海技术物理研究所红外物理国家重点实验室

出　　处：《红外与毫米波学报》1997年第6期406-412,共7页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金

摘　　要：用分子束外延方法在ＧａＡｓ（１００）衬底上生长了Ｚｎ１－ｘＭｇｘＳｅ（０≤ｘ≤１）三元半导体合金薄膜．在室温下测量了这些样品的红外反射光谱．采用介电函数的经典色散理论，并且考虑衬底的影响后，计算了样品的红外反射光谱并与测量结果作了比较．我们发现对于ｘ＜０．２，０．２＜ｘ＜０．５和ｘ≥０．５三种不同情形，反射光谱表现出不同的结构．Zn 1- x Mg x Se films with x from 0 to 1 were grown on GaAs substrates by molecular beam epitaxy. Their infrared reflection spectra were measured at room temperature. Using the classical quasi harmonic oscillator model of dielcetric function and considering the effect of substrate, the reflection spectra were calculated and compared to the experimental results. It was found that the reflection spectra show different behaviors for x <0.2,0.2< x <0.5 and x ≥0.5.

关 键 词：外延薄膜 红外反射光谱 锌锰硒 三元半导体 

分 类 号：TN304.26[电子电信—物理电子学] TN304.054