SiO_2/4H-SiC(0001)界面过渡区的ADXPS研究  

A Transition Region Study of SiO_2/4H-SiC Interface by ADXPS

作　　者：王德君[1] 赵亮[1] 朱巧智[1] 马继开[1] 陈素华[1] 王海波[1] 

机构地区：[1]大连理工大学电子与信息工程学院,大连116024

出　　处：《Journal of Semiconductors》2008年第5期944-949,共6页半导体学报（英文版）

基　　金：国家科技部重大基础研究前期研究专项(批准号:2005CCA00100);辽宁省自然科学基金(批准号:20072192);教育部新世纪优秀人才支持计划(批准号:NCET-06-0278);教育部留学回国人员科研启动基金(批准号:20071108)资助项目~~

摘　　要：采用角依赖X射线光电子谱技术（ADXPS）对高温氧化SiO2／4H—SiC（0001）界面过渡区的组成、成分分布等进行了研究．通过控制1％浓度HF酸刻蚀氧化膜的时间，制备出超薄膜（1～1．5nm）样品，同时借助标准物对照分析，提高了谱峰分解的可靠性．结果显示，高温氧化形成的SiO2／4H-SiC（0001）界面，同时存在着Si^，Si^2＋，Si^3＋ 3种低值氧化物，变角分析表明，一个分层模型适合于描述该过＋渡区的成分分布．建立了过渡区的原子级模型并计算了氧化膜厚度．结合过渡区各成分含量的变化及电容-电压（C-V）测试分析，揭示了过渡区成分与界面态的直接关系．This article reports on the study of the transition region of a SiO2/4H-SiC interface prepared by dry oxidation using ADXPS. The study contains interface composition,component distribution and so on. We prepared the samples with oxidation thicknesses between lnm and 1.5nm based on controlling the speed that the dilute HF acid etches SiO2 grown on SiC. The standard samples were adopted to assist in analysis. The results indicate that the SiO2/4H-SiC interface simultaneously contains Si^1＋ , Si^2＋ , and Si^3＋. The ADXPS results suggest a layered model is suitable for describing the component distribution. An atom-level model of the transition region was established and the thickness of oxidation was calculated. The change of the transition components quantum and C-V curve indicate that the transition components directly affect the density interface trap.

关 键 词：SiO2/SiC界面 4H—SiC ADXPS 界面态 缺陷 

分 类 号：TN304.055[电子电信—物理电子学]