铁磁-非磁性杂质-铁磁隧道结磁电阻效应  

Research of tunneling magnetoresistance effect in ferromagnet-nonmagnetic impurity-ferromagnet system

作　　者：罗勇锋[1] 丁开和[2] 

机构地区：[1]中南林业科技大学理学院,长沙410004 [2]长沙理工大学物理与电子科学学院,长沙410076

出　　处：《中国科学院研究生院学报》2008年第3期329-333,共5页Journal of the Graduate School of the Chinese Academy of Sciences

基　　金：中南林业科技大学引进人才启动项目基金(101-0629);中南林业科技大学青年基金(101-0721)资助

摘　　要：基于波函数匹配方法,研究了铁磁-非磁性杂质-铁磁系统的隧道结磁电阻,结果表明,在一定条件下两铁磁结之间分子场的存在导致了准束缚态的形成.当电子入射能量接近准束缚态能级时共振隧穿发生,在其电导中出现一个峰值.非磁性杂质和两铁磁体中的电子有效质量对微分电导有明显的影响,包括影响电导的幅度和共振峰的位置.Based on wave-matching method, we investigate the tunneling magnetoresistance effect in ferromagnetnonmagnetic impurity-ferromagnet system. The results show that existence of the molecular fields in two ferromagnets leads to the form of quasi-bound states under certain conditions. When the incident energy of electrons matches approximately the energy level of the quasi-bound states, the resonant tunneling occurs, which exhibits a peak in conductance. Nonmagnetic impurity and the effective masses of electrons in two ferromagnetic electrodes have remarkable effects on the behaviors of the conductance, including the amplitudes and the positions of the resonance peaks in conductance.

关 键 词：非磁性杂质 磁电阻效应 隧道结 

分 类 号：O469[理学—凝聚态物理]