Ge_(0.4)Si_(0.6)/Si超晶格光探测器与Si波导的集成探讨:光场分析  

Optical Field Analyses of Integration of Silicon Waveguides and Ge_(0.4) Si_(0.6)/Si Superlattice

作　　者：许雪林[1] 李娜[1] 刘恩科[1] 

机构地区：[1]西安交通大学微电子工程系,710049

出　　处：《固体电子学研究与进展》1997年第4期384-387,共4页Research & Progress of SSE

摘　　要：对Ge0.4Si0.6／Si超晶格探测器光场进行了分析，并用京传播法（BPM）进行模拟。还探讨了这种探测器与Si波导的集成。在Si波导满足单模传输的条件下，推出光场在探测器中达稳态分布时的传播距离。另外还提出了这种探测器的设计长度与波导尺寸之间的依赖关系。The optical field in superlattice photodetector Ge0.4Si0.6/Si is analyzed and has been calculated by the Beam Propagation Method(BPM) in this paper. The possibility of integration of a silicon waveguide and this kind of detector is discussed. On condition that single-mode is propagated in waveguides and detectors,the propagation distance, when it reaches stability, can be calculated. In this paper, the photodetector length versus waveguide parameter is also proposed.

关 键 词：光波导 光探测器 束传播法 锗硅材料 集成光路 

分 类 号：TN814[电子电信—信息与通信工程] TN491