GaAs晶片化学机械抛光的机理分析  

GaAs Wafer Chemomechanical Polishing Mechanism

作　　者：卜俊鹏[1] 郑红军[1] 何宏家[1] 吴让元[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《固体电子学研究与进展》1997年第4期399-402,共4页Research & Progress of SSE

摘　　要：在不同条件下（系统pH值，磨粉浓度，氧化剂浓度），通过对GaAs化学机械抛光速率变化规律的研究和对晶片表面氧化层的俄联（AES）分析，探讨了H2O2胶体磨料化学机械抛光的作用过程（表面氧化十机械磨除＋化学去除）和系统pH值对其过程的影响。Under different polishing conditions (pH value of polishing solution,concentration of colloidal Si and H2O2) the chemomechanical polishing rate of GaAs wafer is measured and the surface analyses are accomplished by Auger Electron Spectroscopy(AES). It is assumed that the chemomechanical polishing is the process including chemical reaction, mechanical removing and chemical removing. It shows how the pH value of polishing solution influences the GaAs polishing process.

关 键 词：抛光 机理分析 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学] TN305.2