微处理器在微区薄层电阻测试Mapping技术中的应用  

Measurement Mapping technique of sheet resistance for microareas using microprocessor

作　　者：孙新宇[1] 孟庆浩[1] 孙以材[1] 孙冰 李福林 

机构地区：[1]河北工业大学电子工程系,天津300130 [2]天津计量技术研究所,天津300192 [3]天津第四半导体器件厂,天津300111

出　　处：《微电子技术》1997年第3期55-62,共8页Microelectronic Technology

基　　金：国家自然科学基金;天津市重大科技成果项目;天津市技术监督局认定项目!<微区薄层电阻测试探针技术>

摘　　要：本文利用微区薄层电阻测试的一种斜置四探针新方法，将扩散微区薄层电阻测试结果绘成全片的灰度图，这种微区薄层电阻测试Mapping技术十分有利于评价材料的质量。在测试过程中应用微处理器，可立即数字显示相应的测量电压及微区的薄层电阻，加快了计算速度并有利于控制探针的合适位置。A new microarea inclined four - probe technique was used for measuring the sheet resistance for boron diffusion doped microareas on a n-type silion wafer. Its distribution is shown with the grey scale. This mapping techique seems to be more suitable to asses the material quality. In the measurement process, We abopted a microprocessor to pick up the measured Voltages and to show the digital values of then respectively, finaIly to turn into the digital sheet resistance. Thus, that speeds up the calculating processes and has the advantage of controlling the proper positions of the probes.

关 键 词：微区薄层电阻 探针技术 微处理器 

分 类 号：TP332.062[自动化与计算机技术—计算机系统结构]