硅基发光材料研究进展  

THE PRESENT RESEARCH AND THE DEVELOPMENT OF Si-BASED LIGHT-EMITTING MATERIALS

作　　者：鲍希茂[1] 宋海智[1] 

机构地区：[1]南京大学

出　　处：《材料研究学报》1997年第6期601-611,共11页Chinese Journal of Materials Research

基　　金：国家自然科学基金!5943202

摘　　要：硅基发光材料是光电子集成的基础材料。发光多孔硅是硅基发光材料的一个新进展，已实现了硅基光电子集成，随着多孔硅研究的深化和纳米科学的发展，硅基发光材料正向纳米方向开拓。与此同时，在新的理论认识与技术条件下，硅材料改性，杂质发光，缺陷工程和硅基异质外延也呈现出新的发展趋势。硅基发光材料的发光波段已覆盖了从红外，可见到紫外的宽阔范围，正在为全色显示和光电子集成奠定材料和技术基础。Si-based light-emitting materials are fundamental in optoelectronic integration. A new stage of Si-based light-emitting materials was created by luminescent porous Si, from which optoelectronic integration was firstly realized. With deepened research of porous Si and the advancing nanometer science, a path towards nanometer light-emitting materials is being opened up. In the mean time, the new theoretical level and technological conditions give rise to fresh development in Si modification, impurity luminescence, defect engineering and Si-based heteroepitaxy. The luminescence has covered a broad band from infrared, visible to ultraviolet, and is establishing the material and technological foundation for the full-color display and optoelectronic integration.

关 键 词：发光材料 光电子学 多孔硅 低维材料 

分 类 号：TN204[电子电信—物理电子学]