缓冲层对NiCo薄膜各向异性磁致电阻的影响  

Influence of buffer layers on the anisotropic magnetoresistance of NiCo films

作　　者：姜宏伟[1] 季红[1] 周丽萍[1] 王艾玲[1] 郑鹉[1] 

机构地区：[1]首都师范大学物理系,北京100037

出　　处：《北京科技大学学报》2008年第5期513-516,共4页Journal of University of Science and Technology Beijing

基　　金：北京市教委科技发展计划资助项目(No.KM200510028004);北京市科委科技计划资助项目(No.Y0404013040211)

摘　　要：用磁控溅射法制备了以NiFeCr和Ta分别为缓冲层的两种NiCo薄膜样品,在不同温度下对两种样品退火.结果表明:在NiCo厚度相同的情况下,以NiFeCr作为缓冲层的样品的各向异性磁致电阻(AMR)值明显高于Ta作为缓冲层的样品.X射线衍射(XRD)的结果表明,NiFeCr/NiCo薄膜的晶粒平均尺寸大于Ta/NiCo薄膜,且两种样品的磁膜/缓冲层界面存在较大差异,这可能是造成两者AMR差异的原因.此外,对样品进行温度适当的热处理可以明显改善薄膜的物理性质.NiCo films were deposited on NiFeCr and Ta buffer layers by using a DC magnetron sputtering system on Si substrates respectively. After deposition the samples were annealed at different temperatures. The structural and magnetic properties were systematically studied. It is shown that the value of anisotropic magnetoresistance （AMR） of the film with a NiFeCr buffer layer is higher than that of the film with a Ta buffer layer. XRD results indicate that the average grain size of the sample with a NiFeCr buffer layer is larger than that of the sample with a Ta buffer layer, and the situation of the NiCo/NiFeCr interface is different from that of NiCo/Ta. These would be responsible for the difference in AMR between the two kinds of films. A suitable anneal treatment is good for the films.

关 键 词：磁性薄膜 缓冲层 各向异性磁致电阻 织构 晶粒尺寸 

分 类 号：TB383[一般工业技术—材料科学与工程] O488.43[理学—固体物理]