Resonant detection of terahertz radiation utilizing plasma waves in high-electron-mobility transistors  

作　　者：马明瑞 陈钰玲 王立敏 王长 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences [2]Graduate School of Chinese Academy of Sciences

出　　处：《Chinese Physics B》2008年第5期1854-1857,共4页中国物理B（英文版）

基　　金：supported by the National Fund for Distinguished Young Scholars of China (Grant No 60425415);the National Science Foundation of China (Grant No 60721004);the Shanghai Municipal Commission of Science and Technology, China (Grant Nos 06DJ14008 and 06CA07001);the National Basic Research Program of China (Grant No 2007CB310402)

摘　　要：This paper theoretically studies the high-electron-mobility transistor （HEMT） driven by the terahertz radiation. It calculates the gate-to-source/drain admittance and the detection responsivity of the HEMT as a function of the signal frequency. It finds that the peaks of the admittances and the responsivity show redshift, and the heights of the peaks decrease with increasing the lengths of the source-to-gate and gate-to-drain spacing. Such phenomena may be useful in designing different HEMTs by utilizing the effects associated with the plasma oscillations excitation.This paper theoretically studies the high-electron-mobility transistor （HEMT） driven by the terahertz radiation. It calculates the gate-to-source/drain admittance and the detection responsivity of the HEMT as a function of the signal frequency. It finds that the peaks of the admittances and the responsivity show redshift, and the heights of the peaks decrease with increasing the lengths of the source-to-gate and gate-to-drain spacing. Such phenomena may be useful in designing different HEMTs by utilizing the effects associated with the plasma oscillations excitation.

关 键 词：terahertz radiation RESONANT HEMT 

分 类 号：O53[理学—等离子体物理]