矩形平面磁控溅射阴极的磁场模拟及结构设计  

Simulation of magnetic field and structural design of rectangularly plane target cathode for magnetron sputtering

作　　者：陈长琦[1] 郭江涛[1] 方应翠[1] 张建国[1] 

机构地区：[1]合肥工业大学机械与汽车工程学院真空应用技术工程中心,安徽合肥230009

出　　处：《真空》2008年第3期65-69,共5页Vacuum

摘　　要：文章模拟分析了结构参数对磁控溅射阴极磁场分布的影响,设计了一种新型的矩形平面磁控溅射阴极,并对设计的阴极磁场进行模拟分析,结果表明有效提高了靶材表面磁场分布的均匀性。采用在阳极框内侧安装高磁导率的导磁板的方法,改变了阴极体和阳极框之间缝隙的磁场分布,解决了缝隙处的连续放电现象。本研究为磁控溅射阴极的设计提供了依据。The effects of structural parameters of target cathode on magnetic field distribution during magnetron sputtering were simulated and analyzed to design a new-type rectangularly plane cathode, then the magnetic field of the designed cathode was simulated and analysed. The results showed that the uniformity of magnetic field distribution on target surface is improved effectively. The interstitial magnetic field distribution between cathode assembly and anode frame is changed by mounting a plate of high magnetic conductivity onto the inner side of anode frame, thus solving the problem of the interstitially continuous discharge. This design provides a reference for the target cathode for magnetron sputtering.

关 键 词：磁控溅射 结构设计 磁场分布 缝隙放电 

分 类 号：TN305[电子电信—物理电子学] TB43[一般工业技术]