氟化电热蒸发/ICP-AES直接测定SiO_2中痕量Fe  

Direct Determination of Trace Fe in SiO 2 with Flourination Electrothermal Vaporization (FETV) ICP AES

作　　者：彭天右[1] 熊宏春[1] 江祖成[1] 

机构地区：[1]武汉大学化学系

出　　处：《分析科学学报》1997年第3期210-212,共3页Journal of Analytical Science

基　　金：国家自然科学基金;国家教委博士点基金

摘　　要：对氟化电热蒸发（ＦＥＴＶ）／ＩＣＰ－ＡＥＳ技术中元素的氟化蒸发行为、基体效应和粒度效应进行了考察，确定了杂质（Ｆｅ）与基体（Ｓｉ）分离的最佳实验条件．本法用于ＳｉＯ２中痕量Ｆｅ的直接测定，有灵敏、简便，试样消耗少和不需化学前处理等优点．The effects of particle size and influence of matrix on Fe signal in FETV ICP AES have been investigated in detail. The fluorinating vaporization behaviors of Si and Fe were also studied. Under optimal experimental conditions, the proposed approach has been applied to the determination of trace Fe in SiO 2 powder. It is a direct, rapid and sensitive method as well as low sample volume and no pretreatment.

关 键 词：PTFE FETV ICP AES 二氧化硅 铁 

分 类 号：O614.811[理学—无机化学]