检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
机构地区:[1]杭州电子科技大学微电子CAD研究所,浙江杭州310018 [2]东芝水电设备有限公司,浙江杭州311504
出 处:《电子学报》2008年第5期1035-1040,共6页Acta Electronica Sinica
基 金:国家自然科学基金(No.60506015);浙江省自然科学基金(No.Y107105)
摘 要:DRIE(Deep Reactive Ion Etching)工艺加工的高深宽比梳齿电容不能保证绝对平行.本文在考虑低真空空气阻尼力的同时,研究了梳齿电容倾斜的MEMS传感器对脉冲惯性信号的响应,并分析了DRIE工艺因素对器件性能的影响.研究结果表明,当传感器为没有静电力反馈的双边电容结构时,梳齿电容的不平行对传感器的响应位移、惯性脉冲响应线性度范围影响明显,且随着封装真空度增加而加重.若传感器有静电力反馈,惯性脉冲响应的灵敏度降低,但DRIE工艺因素的影响程度降低.为了抑制DRIE工艺导致的梳齿电容不平行因素的影响,文中还设计了一个新型的变电容面积的MEMS惯性传感器,并用ANSYS初步分析了其性能,设计了其详细的制作工艺流程.The combs of the comb capacitive inertial sensors fabricated by a deep reactive ion etching (DRIE) are usually not parallel. In this paper, inertial pulse response of MEMS capacitive accelerometer with non-parallel combs is studied considering the air damping in low vacuum, and the effects of DRIE process on performance of the micro-accelerometer are analyzed. The resuits show that for double-sided structure, the non-parallel comb factor influences the displacement caused by outside acceleration and decreases the finearity range of inertial pulse response of the sensors, as the air pressure becomes smaller, the effects are more obvious. For double-sided structure with feedback voltage, the feedback force decreases the sensitivity of pulse inertial signal, but the effects of DRIE on the performances of the sensor become smaller compared to the structure without feedback voltage. To restrain the non-parallel factor of DRIE process, a novel MEMS capacitive accelerometer structure is proposed, and the primary performance is analyzed by FEM tool ANSYS and the detailed fabricated process is designed.
关 键 词:高精度微传感器 倾斜梳齿 惯性脉冲响应 MEMS
分 类 号:TN43[电子电信—微电子学与固体电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.15