增益自适应高频低噪声放大器的单片集成设计研究  

Research on the Monolithic Circuit Design of High-frequency LNA with AGC

作　　者：孙宇[1] 陈华君[1] 吴孙桃[1] 郭东辉[1] 

机构地区：[1]厦门大学,福建厦门361005

出　　处：《现代电子技术》2008年第11期56-59,62,共5页Modern Electronics Technique

摘　　要：高频低噪声放大器（LNA）是无线通讯设备关键器件之一。由于无线通讯设备特别是移动通讯设备使用环境的条件限制，往往需要LNA器件具有自适应增益功能，以保证接收信号的稳定性。拟设计一款具有自适应增益控制的高频LNA单片集成电路,以TSMC 0.18 μm的RF-CMOS器件模型和工艺参数，给出一个增益范围在0-17 dB、噪声抑制比为0.2 dB,适用于DCS1800手机中的1.8 GHz增益自适应CMOS放大器电路。High-frequency Low-Noise Amplifier （LNA） is one of the key devices about wireless communication equipment.As wireless communication equipment in particular the use of mobile communication equipment environmental conditions,often require LNA having the function of gain adaptive,in order to ensure the stability of signal reception.This paper is intended to design a high-frequency adaptive gain control of LNA monolithic integrated circuits.This paper used TSMC-0.18 μm RF-CMOS device model and gain adaptive CMOS amplifier circuit are given with process parameters in a gain of 0~17 dB,the noise suppression than 0.2 dB ,applying to the DCS1800 phones.

关 键 词：射频集成电路 低噪声放大器 增益自适应 CMOS 

分 类 号：TN722.3[电子电信—电路与系统]