无酸水热法制备多孔硅及其PⅢ表面改性  

Porous Si Prepared by Hydrothermal Etching and Its Surface Transformation Induced by PⅢ

作　　者：李慧[1] 卢茜[1] 吴子景[1] 吴晓京[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《半导体技术》2008年第6期488-491,494,共5页Semiconductor Technology

基　　金：上海市重点学科建设资助项目(B113)

摘　　要：采用无酸水热法,制备了多孔硅材料。使用扫描电子显微镜、原子力显微镜等手段观察了样品表面形貌,比较了在不同氧化铋刻蚀剂量下得到的多孔硅结构,发现随着刻蚀剂浓度的增加,平均孔径尺寸变大,且孔径分布趋于离散。使用等离子浸没注入技术,对多孔硅样品进行了表面注氮处理。室温荧光光谱研究发现处理后的样品的光谱峰位产生了蓝移,根据X光电子能谱仪检测的结果发现样品表面形成了Si-NxOy相,这一物相的出现导致了光谱的蓝移。Hydrofluoric-acid-free hydrothermal-etching technique was used for preparing porous Si （PS）. Surface morphologies were observed by SEM and AFM. It is found that with the increasing of bismuth oxide dosage the average size of holes become larger, and the distribution of the hole sizes become much broad. By plasma immersion ion implantation （PⅢ） technique, high dose nitrogen ions were implanted into the surface of porous Si. Room temperature photoluminescence （PL） spectrum shows a blue-shift in the Nions implanted sample. The XPS spectrums show the formation of Si-NxOy in PS, which cause the blue-shift of PL.

关 键 词：无酸水热法 多孔硅 等离子体浸没注入技术 光致发光 

分 类 号：TN305.3[电子电信—物理电子学]