正电子湮没方法研究掺杂BGO辐照损伤  

A study on radiation damage of doped BGO by positron annibilation technique

作　　者：陈玲燕[1] 项开华 魏宗英 何崇藩[2] 殷之文[2] 

机构地区：[1]同济大学 [2]中国科学院上海硅酸盐研究所

出　　处：《核技术》1990年第6期327-331,共5页Nuclear Techniques

摘　　要：本文介绍用正电子湮没寿命谱和Doppler展宽谱方法研究掺杂BGO辐照损伤效应。在150Gy^(60)Coγ剂量及UV辐照下,掺杂BGO出现表征色心形成的新寿命成分,其中以掺杂质Pb最为明显,此结果与荧光输出结果相符。对掺杂BGO辐照损伤机制进行了讨论。The radiation damage of doped BGO is studied by measuring positron annihilation lifetimes and Doppler broadening S parameters. Under the irradiation of UV and Co-60 γ ray of 150Gy, a new lifetime component has been observed for some doped BGOs, aspecially for impurity element Pb doped BGO. Our results are in agreement with a former study on the fluorescence output. Finally, the radiation damage mechanism is discussed.

关 键 词：掺杂BGO 晶体 损伤 正电子湮没法 

分 类 号：O744[理学—晶体学]