用正电子湮没技术研究BaF_2的辐射损伤  

A study on radiation damage of BaF_2 crystals by positron annihilation technique

作　　者：韩荣典[1] 蒋惠林[1] 邹川明 宋健先 宫竹芳[1] 汪兆民[1] 卞祖和[1] 

机构地区：[1]中国科学技术大学

出　　处：《核技术》1990年第7期414-419,共6页Nuclear Techniques

基　　金：中国科大结构分析中心国家开放实验室的资助

摘　　要：用正电子湮没技术研究了BaF_2晶体经不同剂量辐照后的湮没参数。在大剂量(1.7kGy)辐照后,BaF_2的正电子湮没寿命谱及一维角关联曲线都发生了变化,这说明辐照使晶体结构发生了某种变化。辐射损伤可以恢复,且曝光处理可以加速其性能的恢复。The changes of positron annihilation parameters of BaF2 crystals irradiated with different doses have been studied. The lifetime of positron annihilation and the one-dimensional Y angular correlation curve varied after irradiation, which indicated that the structure of BaF2 crystals had changed to some extent. The properties of the damaged BaF2 crystals can recover and the recovery becomes faster when BaF2 is exposea to visible light, especially ultraviolet.

关 键 词：BAF2晶体 正电子 湮没 辐射损伤 

分 类 号：O774[理学—晶体学]