疏水型纳米多孔SiO_2薄膜的制备与性能表征  

Synthesis and Characterization of Hydrophobic Nanoporous Silica Film

作　　者：高庆福[1] 冯坚[1] 李明月[2] 张长瑞[1] 王小东[1] 冯军宗[1] 

机构地区：[1]国防科技大学航天与材料工程学院CFC国防科技重点实验室,湖南长沙410073 [2]中国电子科技集团第十三研究所,河北石家庄050002

出　　处：《稀有金属材料与工程》2008年第A02期221-224,共4页Rare Metal Materials and Engineering

基　　金：国防预研项目资助(41312040307)

摘　　要：采用TMCS对超临界干燥后的纳米多孔SiO2薄膜进行疏水处理,利用FTIR、SEM、椭偏仪和LCR测量仪等对薄膜的性能进行表征。研究表明:TMCS修饰后薄膜呈疏水性;薄膜的厚度有所降低,但孔隙率无明显变化;薄膜的实测介电常数值接近理论计算值,为2.0～2.3,且随时间无显著增大。Nanoporous silica film was treated by TMCS modification after supercritical drying. The properties were characterized by FTIR, SEM, spectroscopic ellipsometry and LCR. The results revealed that： the film was hydrophobic after TMCS treatment; the thickness of the film was decreased but the porosity was nearly the same as before; the dielectric constant measured was about 2.0-2.3 which was close to the calculated, and didn＇t increase greatly with the time.

关 键 词：纳米多孔SiO2薄膜 疏水处理 低介电常数 

分 类 号：TB383.2[一般工业技术—材料科学与工程]