应变闪锌矿(001)取向GaN/AlGaN量子阱中受屏蔽激子的压力效应  

Pressure Effect of Screened Excitons in a Strained (001)-oriented Zinc-blende GaN/AlGaN Quantum Well

作　　者：哈斯花[1] 班士良[1] 

机构地区：[1]内蒙古大学物理科学与技术学院,呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2008年第3期269-274,共6页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金资助项目(60566002);内蒙古自治区优秀学科带头人计划项目

摘　　要：采用变分法与自洽计算相结合的方法讨论了在电子-空穴气体屏蔽影响下应变闪锌矿(001)取向GaN/AlxGa1-xN量子阱中激子结合能的压力效应.结果表明,若考虑压力对双轴及单轴应变的调制以及禁带宽度、有效质量和介电常数等参数的影响,激子结合能随压力的增大近似线性增加.此外,由简化相干近似法讨论了垒材料AlxGa1-xN中铝组分对激子结合能的影响.结果表明,在固定的压力下当铝组分增加时激子结合能会逐渐增加;且压力较大时结合能随组分的增加更加显著.The pressure effect of the excitons screened by the electron-hole gas, in a strained （001）-oriented zinc-blende GaN/Alx Gal-x N quantum well, is investigated by combining a variational method and a self-consistent procedure. The result indicates that the binding energies of excitons increase nearly linearly with pressure, even as the modification of strain by hydrostatic pressure is considered. In addition,a simplified coherent potential approximation is used to calculate the influence of A1 component in ternary mixed crystal AlxGal-xN on the binding energies of excitons. The results show that the binding energy increases with Al component under a fixed pressure. Furthermore the increase of exciton binding energy is more obvious under a higher pressure as increase of AI component.

关 键 词：应变闪锌矿量子阱 激子结合能 电子-空穴气屏蔽 压力 

分 类 号：O471.3[理学—半导体物理]