牺牲层腐蚀改进模型与模拟研究  

A Modified Model and Simulation of Sacrificial Layer Etching

作　　者：彭奇[1] 李伟华[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《传感技术学报》2008年第2期207-210,共4页Chinese Journal of Sensors and Actuators

基　　金：国家863项目资助(2006AA04Z302)

摘　　要：牺牲层腐蚀主要受腐蚀液的扩散过程制约,由扩散方程决定。扩散系数在腐蚀过程中随温度和腐蚀液浓度变化而改变。文中对改进的腐蚀模型给出有限差分算法,由每一时刻溶液在具体位置的浓度值得出扩散系数,再由Topography模型计算前端面的腐蚀情况得到腐蚀前端行进的轮廓线。并编程对一些MEMS结构的释放过程进行仿真,最后给出实验验证。Sacrificial layer etching is affected mostly by the diffusion of etching solution, and is determined by diffusion equation. The diffusion coefficient is altered with the changing of temperature and the concentration of etching solution during the process. The numerical algorithm of finite-difference method is given for the modified etching model in which diffusion coefficient is determined by the solution＇s concentration of the current position of the moment. Then the Topography Model is used to compute the etching state which determining the etching front contour. The simulation program that can simulate some common sacrificial structures is implemented, and then experimental validation is presented.

关 键 词：牺牲层腐蚀 扩散系数 扩散方程 差分算法 

分 类 号：TN402[电子电信—微电子学与固体电子学]