MOS器件二次击穿行为的电路级宏模块建模  

A Model of MOSFET’s Second Breakdown Action in Circuit-Level

作　　者：崔强[1] 韩雁[1] 董树荣[1] 刘俊杰[1,2] 斯瑞珺[1] 

机构地区：[1]浙江大学微电子与光电子研究所,杭州310027 [2]中佛罗里达大学电机系,美国奥兰多32816

出　　处：《传感技术学报》2008年第2期361-364,共4页Chinese Journal of Sensors and Actuators

基　　金：浙江省新苗人才计划资助(“XinMiao Project of Science and Technology Department of Zhejiang Province”);浙江省自然科学基金资助项目(Zhejiang Province Natural Science Foundation)(Y107055)

摘　　要：采用一种利用TCAD仿真提取MOS器件在静电放电现象瞬间大电流情况下的电学参数,对MOS器件二次击穿行为进行电路级宏模块建模。MOS器件是一种重要的静电放电防护器件,被广泛地应用为集成电路输入输出口的静电保护器件。用TCAD仿真工具对MOS器件的二次击穿进行宏模块建模,该模型能够正确反映MOS器件二次击穿的深刻机理,具有良好的精确性和收敛性,这对在电路级以及系统级层面上仿真静电放电防护网络的抗静电冲击能力有重要意义。A method to exact the electrical parameters and model the second breakdown action of MOSFET＇s under ESD （Electro-Static Discharge） on circuit-level, using TCAD simulation, is presented. MOSFET is one of the most important ESD protection devices, and is widely used as I/O protection device in imegrated circuits. We pres- ent an accurate macro model of the MOSFET based on deep analyzing of the physical mechanism of the second breakdown, using TCAD simulation. This macro model owns fine convergency and accuracy which are of importance to the simulation of the ESD protection ability of the ESD protection network on circuit and system level.

关 键 词：MOS 二次击穿 电路级 宏模块 建模 

分 类 号：TN45[电子电信—微电子学与固体电子学]