微小孔径场发射阵列的电子束特性数值模拟  

Numerical Simulation and Characteristic of Electron Beam in Micro-Hole Field Emission Array

作　　者：汪志刚[1] 林祖伦[1] 王小菊[1] 徐枫[1] 高峰[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《电子器件》2008年第3期800-802,共3页Chinese Journal of Electron Devices

摘　　要：以场发射基本原理为基础,简化三极管阵列模型,采用有限差分法对微孔径场发射阵列进行了三维模拟。通过改变栅极孔径和尖锥高度并保持其它参数不变的情况,从而获得阳极电子束斑的直径。得到不同情况下的阳极电子束光斑直径的变化。分析了导致电子束光斑大小变化的原因。得出与实际相符合的数值模拟,为试验提供设计依据。Based on field emission theory, the process of micro-hole field emission array is simulated through the simple construction by using finite difference. Changing the size of the gate hole and height of tips and keeping the other parameters invariable can alter the diameter of electron beam on the anode. Through the simulation we can obtain the relation between the size of the gate hole and the height of the tips and explain the reason. The numerical results are given for the experimental design in the real condition.

关 键 词：场发射 有限差分 电子束 

分 类 号：TN432[电子电信—微电子学与固体电子学]