一种低驱动电压的SP4T RF MEMS开关  

SP4T RF MEMS Switch with Low Actuation Voltage

作　　者：胡光伟[1] 刘泽文[1] 侯智昊[1] 李志坚[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《传感技术学报》2008年第4期656-659,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金资助(60576048);北京市科委项目基金资助(GYYKW05070014)

摘　　要：设计并制备了一种低电压的静电驱动接触式单刀四掷(SP4T)RFMEMS开关。单元开关采用以低应力氮氧化硅(SiON)作为桥膜的双端固定桥式结构,并利用附着的金层形成接触结构。整个SP4T开关包括与50Ω特征阻抗相匹配的共面波导,1个输入端,4个输出端,4个静电驱动的侧拉桥,以及4个驱动引出区(pad)。测试数据表明,开关驱动电压18.8V;插入损耗S21<0.26dB@DC-3GHz,S31<0.46dB@DC-3GHz;隔离度S21>69.5dB@DC-3GHz,S31>69.2dB@DC-3GHz。结果显示,此开关的隔离度在所有输出端有很好的一致性,插损在DC-3GHz的频段内均较小,非常适合低频使用。An electrostatic actuated SP4T （single-pole multi-throw） contact RF MEMS switch with low voltage is designed and fabricated. SiON （silicon oxynitride） with low initial stress is used as the functional material of the fixed-fixed bridge of the unit switch, and gold as the contact metal. The whole SP4T switch consists of coplanar waveguide which meets 50 Ω characteristic impedance match, an input port, four output ports, four static actuated bridges, and four control pads. Measurements show the actuation voltage is 18. 8 V, insertion loss S21〈0.26dB@DC-3 GHz, S31〈0. 46 dB@DC-3 GHz, isolation S21：〉 69. 5 dB@DC-3 GHz, S31：〉69.2 dB@DC-3 GHz. The results indicate that four output ports present very similar isolation, and their insertion loss are enough small at low frequency band.

关 键 词：RF MEMS 开关 单刀多掷 接触式 

分 类 号：TN385[电子电信—物理电子学] TN62