串联电容式RF MEMS开关设计与制造研究  

Design and Fabrication of a Capacitive Series RF MEMS Switch

作　　者：侯智昊[1] 刘泽文[1] 胡光伟[1] 刘理天[1] 李志坚[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《传感技术学报》2008年第4期660-663,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金资助(60576048);北京市科委项目基金资助(GYYKW05070014)

摘　　要：介绍了一种串联电容式RF MEMS开关的设计与制造。所设计的串联电容式RF MEMS开关利用薄膜淀积中产生的内应力使MEMS桥膜向上发生翘曲,从而提高所设计的开关的隔离度,克服了串联电容式RF MEMS开关通常只有在1GHz以下才能获得较高隔离度的缺点。其工艺与并联电容式RF MEMS开关完全相同,解决了并联电容式RF MEMS开关不能应用于低频段（〈10GHz）的问题。其插入损耗为-0.88dB@3GHz,在6GHz以上,插入损耗为-0.5dB;隔离度为-33.5dB@900MHz、-24dB@3GH和-20dB@5GHz,适合于3-5GHz频段的应用。The design and fabrication of a capacitive series RF MEMS switch is reported. The up-electrode warps up under the residue stress, which increases the isolation of the capacitive series RF MEMS switch. The disadvantage of capacitive series RF MEMS switch, which only has high isolation at below 1 GHz, is overcome. The fabrication process is the same with capacitive shunt switch. Comparing with capacitive shunt switch, the fabricated capacitive series RF MEMS switch has the advantage in low frequency application （〈10 GHz）. The insertion loss is -0. 8 dB@3 GHz and -0. 5 dB above 6 GHz; the isolation is -33. 5 dB@900 MHz, -24 dB@3 GHz and -20 dB@5 GHz, which is suit for the application of frequen cy range from 3 GHz to 5 GHz.

关 键 词：射频 微电子机械系统 串联电容式RF MEMS开关 串联电容式 内应力 

分 类 号：TN385[电子电信—物理电子学] TN62