NAND FLASH编程实现研究分析  

Study and Analysis on Realization Coding of NAND FLASH

作　　者：陆林燕[1] 王鲁静[1] 郑正奇[1] 

机构地区：[1]华东师范大学电子系,上海200062

出　　处：《计算机技术与发展》2008年第3期118-120,124,共4页Computer Technology and Development

摘　　要：以阐明编程支持NAND FLASH的方法为目的。总览了NAND FLASH层次结构;讨论了NAND FLASH的写操作过程,这种写操作的特点也是FLASH有别于其它存储介质的地方,同时也对NAND FLASH的擦除操作做了介绍;在对整体的框架和特点有了了解之后,进一步对编程支持NAND FLASH的过程中会遇到的一些概念和细节给出了具体的说明。对NAND FLASH的编程支持有一定的复杂性,但只要了解了它的工作方式,也并非难事。Aim at describing the method of making the NAND FLASH work by coding. Firstly the architecture of NAND FLASH is talked. Then the programming process,which is the difference between NAND FLASH and other storage media, is discussed. In the same time,the erase operation is also introduced. After aclear image of the whole frame of NAND FLASH is built, concepts and details will meet at ＇the coding progress to support NAND FLASH is accounted for specifically. It is complicated to support NAND FLASH by coding, however it is not so difficult as long as know the work style of NAND FLASH.

关 键 词：NAND FLASH 写操作 地址转换 ECC校验 

分 类 号：TP311[自动化与计算机技术—计算机软件与理论]